5秒后页面跳转
UNR5216-S PDF预览

UNR5216-S

更新时间: 2024-02-01 04:25:14
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
17页 435K
描述
SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN

UNR5216-S 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
JESD-30 代码:R-PDSO-G3端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
端子面层:NOT SPECIFIED端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

UNR5216-S 数据手册

 浏览型号UNR5216-S的Datasheet PDF文件第2页浏览型号UNR5216-S的Datasheet PDF文件第3页浏览型号UNR5216-S的Datasheet PDF文件第4页浏览型号UNR5216-S的Datasheet PDF文件第5页浏览型号UNR5216-S的Datasheet PDF文件第6页浏览型号UNR5216-S的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR521x Series (UN521x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
+0.1  
For digital circuits  
0.15  
0.3  
–0.0  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
1
2
S-Mini type package, allowing automatic insertion through the tape  
packing and magazine packing  
(0.65) (0.65)  
1.3 0.1  
2.0 0.2  
Resistance by Part Number  
10˚  
Marking symbol (R1)  
(R2)  
UNR5210 (UN5210)  
UNR5211 (UN5211)  
UNR5212 (UN5212)  
UNR5213 (UN5213)  
UNR5214 (UN5214)  
UNR5215 (UN5215)  
UNR5216 (UN5216)  
UNR5217 (UN5117)  
UNR5218 (UN5218)  
UNR5219 (UN5219)  
UNR521D (UN521D)  
UNR521E (UN521E)  
UNR521F (UN521F)  
UNR521K (UN521K)  
UNR521L (UN521L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-70  
SMini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR521M (UN521M) EL  
UNR521N (UN521N)  
UNR521T (UN521T)  
UNR521V (UN521V)  
UNR521Z (UN521Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00024CED  
1

与UNR5216-S相关器件

型号 品牌 描述 获取价格 数据表
UNR5217 PANASONIC Silicon NPN epitaxial planar type

获取价格

UNR5217(UN5217) ETC Composite Device - Transistors with built-in Resistor

获取价格

UNR5217|UN5217 PANASONIC Composite Device - Transistors with built-in Resistor

获取价格

UNR5217G PANASONIC Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

获取价格

UNR5217G-Q PANASONIC 暂无描述

获取价格

UNR5217Q PANASONIC Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

获取价格