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UNR5216R PDF预览

UNR5216R

更新时间: 2024-01-18 00:53:50
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 286K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70

UNR5216R 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
JESD-30 代码:R-PDSO-G3端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
端子面层:NOT SPECIFIED端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

UNR5216R 数据手册

 浏览型号UNR5216R的Datasheet PDF文件第2页浏览型号UNR5216R的Datasheet PDF文件第3页浏览型号UNR5216R的Datasheet PDF文件第4页浏览型号UNR5216R的Datasheet PDF文件第5页浏览型号UNR5216R的Datasheet PDF文件第6页浏览型号UNR5216R的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/  
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z  
(UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521D/521E/  
521F/521K/521L/521M/521N/521T/521V/521Z)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
2.1 0.1  
0.425  
1
1.25 0.1  
0.425  
For digital circuits  
3
Features  
I
G
2
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
G
S-Mini type package, allowing automatic insertion through tape  
packing and magazine packing.  
Resistance by Part Number  
I
0.2 0.1  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR5211  
UNR5212  
UNR5213  
UNR5214  
UNR5215  
UNR5216  
UNR5217  
UNR5218  
UNR5219  
UNR5210  
UNR521D  
UNR521E  
UNR521F  
UNR521K  
UNR521L  
UNR521M  
UNR521N  
UNR521T  
UNR521V  
UNR521Z  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
EIAJ : SC–70  
S–Mini Type Package  
8H  
8I  
Internal Connection  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
EZ  
FD  
FF  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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