5秒后页面跳转
UNR5214R PDF预览

UNR5214R

更新时间: 2024-02-01 17:21:18
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
17页 438K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMINI3-G1, SC-70, 3 PIN

UNR5214R 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNR5214R 数据手册

 浏览型号UNR5214R的Datasheet PDF文件第2页浏览型号UNR5214R的Datasheet PDF文件第3页浏览型号UNR5214R的Datasheet PDF文件第4页浏览型号UNR5214R的Datasheet PDF文件第6页浏览型号UNR5214R的Datasheet PDF文件第7页浏览型号UNR5214R的Datasheet PDF文件第8页 
UNR521x Series  
Characteristics charts of UNR5212  
IC VCE  
VCE(sat) IC  
hFE IC  
102  
10  
400  
300  
200  
100  
0
160  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
IB = 1.0 mA  
0.9 mA  
0.7 mA  
0.8 mA  
120  
0.6 mA  
0.5 mA  
Ta = 75°C  
0.4 mA  
1
80  
0.3 mA  
25°C  
25°C  
Ta = 75°C  
25°C  
0.2 mA  
10 1  
40  
25°C  
0.1 mA  
10 2  
10 1  
0
1
10  
102  
1
10  
102  
103  
0
2
4
6
8
10  
12  
(
)
(
)
Collector current IC mA  
(
)
V
Collector current IC mA  
Collector-emitter voltage VCE  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
102  
10  
6
5
4
3
2
1
0
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
10 1  
10 2  
10 1  
10 1  
Collector-base voltage VCB  
1
10  
102  
0.4  
0.6  
0.8  
1.0  
1.2  
(V)  
1.4  
1
10  
102  
(
)
V
Input voltage VIN  
(m  
)
A
Output current IO  
Characteristics charts of UNR5213  
IC VCE  
VCE(sat) IC  
hFE IC  
102  
10  
400  
160  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
Ta = 75°C  
25°C  
300  
200  
100  
0
120  
0.6 mA  
0.5 mA  
0.4 mA  
25°C  
1
80  
0.3 mA  
Ta = 75°C  
25°C  
0.2 mA  
10 1  
40  
25°C  
0.1 mA  
10 2  
10 1  
0
103  
1
10  
102  
1
10  
102  
0
2
4
6
8
10  
12  
(
)
(
)
(
)
V
Collector current IC mA  
Collector current IC mA  
Collector-emitter voltage VCE  
SJH00024CED  
5

与UNR5214R相关器件

型号 品牌 描述 获取价格 数据表
UNR5215 PANASONIC Silicon NPN epitaxial planar type

获取价格

UNR5215(UN5215) ETC Composite Device - Transistors with built-in Resistor

获取价格

UNR5215|UN5215 PANASONIC Composite Device - Transistors with built-in Resistor

获取价格

UNR5215G PANASONIC Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

获取价格

UNR5215G-Q PANASONIC Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

获取价格

UNR5215Q PANASONIC Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

获取价格