生命周期: | Obsolete | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 160 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UNR511LR | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3- | |
UNR511LS | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3- | |
UNR511M | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type | |
UNR511M(UN511M) | ETC |
获取价格 |
複合デバイス - 抵抗内蔵型トランジスタ | |
UNR511M|UN511M | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR511MQ | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3- | |
UNR511N | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type | |
UNR511N(UN511N) | ETC |
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複合デバイス - 抵抗内蔵型トランジスタ | |
UNR511N|UN511N | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR511NGQ | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO |