UNR32A7G

更新时间： 2024-10-15 13:15:11

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
3页	81K
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UNR32A7G 数据手册

Transistors with built-in Resistor

UNR32A7

Silicon NPN epitaxial planar transistor

Unit: mm

+0.05

–0.02

+0.05

0.33

0.10

–0.02

For digital circuits

■ Features

• Suitable for high-density mounting and downsizing of the equipment

• Contribute to low power consumption

+0.05

0.23

–0.02

(0.40)(0.40)

0.80 ^0.05

1.20 0.05

5°

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

P_T

T_j

°C

1: Base

2: Emitter

3: Collector

Total power dissipation

Junction temperature

Storage temperature

100

125

SSSMini3-F1 Package

T_stg

−55 to +125

°C

Marking Symbol: HE

Internal Connection

R₁(22 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high level

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 10 V, I_C= 5 mA

0.1

0.5

µA



I_CEO

I_EBO

0.01

460

0.25

h_FE

160

4.9

V_CE(sat)I_C= 10 mA, I_B= 0.3 mA

V_OH

V_OL

R₁

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

Output voltage low level

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

0.2

Input resistance

−30%

+30%

kΩ

MHz

Transition frequency

f_T

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

150

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: December 2002

SJH00065AED

12 3

中文翻译

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