5秒后页面跳转
UNR4112S PDF预览

UNR4112S

更新时间: 2024-11-16 13:15:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关ISM频段
页数 文件大小 规格书
15页 381K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1, 3 PIN

UNR4112S 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):290
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UNR4112S 数据手册

 浏览型号UNR4112S的Datasheet PDF文件第2页浏览型号UNR4112S的Datasheet PDF文件第3页浏览型号UNR4112S的Datasheet PDF文件第4页浏览型号UNR4112S的Datasheet PDF文件第5页浏览型号UNR4112S的Datasheet PDF文件第6页浏览型号UNR4112S的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR411x Series (UN411x Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
4.0 0.2  
2.0 0.2  
For digital circuits  
0.75 max.  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
New S type package, allowing supply with the radial taping  
Resistance by Part Number  
(R1)  
(R2)  
+0.20  
0.45  
–0.10  
UNR4110 (UN4110)  
UNR4111 (UN4111)  
UNR4112 (UN4112)  
UNR4113 (UN4113)  
UNR4114 (UN4114)  
UNR4115 (UN4115)  
UNR4116 (UN4116)  
UNR4117 (UN4117)  
UNR4118 (UN4118)  
UNR4119 (UN4119)  
UNR411D (UN411D)  
UNR411E (UN411E)  
UNR411F (UN411F)  
UNR411H (UN411H)  
UNR411L (UN411L)  
UNR411M  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
+0.20  
0.45  
–0.10  
(2.5) (2.5)  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
0.7 0.1  
1: Emitter  
2: Collector  
3: Base  
1
2
3
NS-B1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
R1  
B
C
E
R2  
UNR411N  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
300  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00018DED  
1

与UNR4112S相关器件

型号 品牌 获取价格 描述 数据表
UNR4113 PANASONIC

获取价格

Silicon PNP epitaxial planar type
UNR4113(UN4113) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR4113|UN4113 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR4113Q PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR4114 PANASONIC

获取价格

Silicon PNP epitaxial planar type
UNR4114(UN4114) ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR4114|UN4114 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR4114Q PANASONIC

获取价格

暂无描述
UNR4114S PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR4115 PANASONIC

获取价格

Silicon PNP epitaxial planar type