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UNR4117Q PDF预览

UNR4117Q

更新时间: 2024-11-15 23:39:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
14页 222K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK

UNR4117Q 数据手册

 浏览型号UNR4117Q的Datasheet PDF文件第2页浏览型号UNR4117Q的Datasheet PDF文件第3页浏览型号UNR4117Q的Datasheet PDF文件第4页浏览型号UNR4117Q的Datasheet PDF文件第5页浏览型号UNR4117Q的Datasheet PDF文件第6页浏览型号UNR4117Q的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR4111/4112/4113/4114/4115/4116/4117/  
4118/4119/4110/411D/411E/411F/411H/411L  
(UN4111/4112/4113/4114/4115/4116/4117/4118/  
4119/4110/411D/411E/411F/411H/411L)  
Unit: mm  
Silicon PNP epitaxial planer transistor  
4.0±0.2  
For digital circuits  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
marking  
New S type package, allowing supply with the radial taping.  
1
2
3
1.27 1.27  
Resistance by Part Number  
2.54±0.15  
(R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
UNR4111  
UNR4112  
UNR4113  
UNR4114  
UNR4115  
UNR4116  
UNR4117  
UNR4118  
UNR4119  
UNR4110  
UNR411D  
UNR411E  
UNR411F  
UNR411H  
UNR411L  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
New S Type Package  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
300  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The part numbers in the parenthesis show conventional part number.  
1

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