Datasheet > UNR4119|UN4119

UNR4119|UN4119

更新时间： 2024-10-02 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
15页	381K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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UNR4119|UN4119 数据手册

Transistors with built-in Resistor

UNR411x Series (UN411x Series)

Silicon PNP epitaxial planar type

Unit: mm

4.0 0.2

2.0 ^0.2

For digital circuits

0.75 max.

■ Features

•

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

•

New S type package, allowing supply with the radial taping

■ Resistance by Part Number

(R₁)

(R₂)



+0.20

0.45

–0.10

•

UNR4110 (UN4110)

UNR4111 (UN4111)

UNR4112 (UN4112)

UNR4113 (UN4113)

UNR4114 (UN4114)

UNR4115 (UN4115)

UNR4116 (UN4116)

UNR4117 (UN4117)

UNR4118 (UN4118)

UNR4119 (UN4119)

UNR411D (UN411D)

UNR411E (UN411E)

UNR411F (UN411F)

UNR411H (UN411H)

UNR411L (UN411L)

UNR411M

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

+0.20

0.45

–0.10

(2.5) (2.5)

10 kΩ

22 kΩ

47 kΩ



0.7 ^0.1

1: Emitter

2: Collector

3: Base

NS-B1 Package



Internal Connection

5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

R₁

R₂

UNR411N

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

−100

°C

300

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00018DED

12 3 4 5 6 7...15

中文翻译

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与UNR4119|UN4119相关器件

型号	品牌	获取价格	描述	数据表
UNR4119S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR411D	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR411D(UN411D)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411D\|UN411D	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411DR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR411E	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR411E(UN411E)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR411E\|UN411E	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411ER	PANASONIC	获取价格	暂无描述
UNR411F	PANASONIC	获取价格	Silicon PNP epitaxial planar type