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UNR32A9 PDF预览

UNR32A9

更新时间: 2024-11-16 15:56:03
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 85K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSSMINI3-F1, 3 PIN

UNR32A9 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO 10
最大集电极电流 (IC):0.08 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNR32A9 数据手册

 浏览型号UNR32A9的Datasheet PDF文件第2页浏览型号UNR32A9的Datasheet PDF文件第3页 
Transistors with built-in Resistor  
UNR32A9  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.05  
–0.02  
+0.05  
For digital circuits  
0.33  
0.10  
–0.02  
3
Features  
Suitable for high-density mounting downsizing of the equipment  
Contribute to low power consumption  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
0.80 0.05  
1.20 0.05  
Absolute Maximum Ratings Ta = 25°C  
5°  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
80  
mA  
mW  
°C  
1: Base  
2: Emitter  
3: Collector  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
125  
SSSMini3-F1 Package  
Tstg  
55 to +125  
°C  
Marking Symbol: HK  
Internal Connection  
R1 (1 kΩ)  
C
E
B
R2  
(10 kΩ)  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
ICBO  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
IC = 10 µA, IE = 0  
IC = 2 mA, IB = 0  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
VCE = 10 V, IC = 5 mA  
50  
V
0.1  
0.5  
1.5  
µA  
µA  
mA  
ICEO  
IEBO  
hFE  
30  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ  
4.9  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ  
0.2  
+30%  
0.12  
V
Input resistance  
30%  
1
kΩ  
Resistance ratio  
R1 / R2  
fT  
0.08  
0.10  
150  
Transition frequency  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: October 2004  
SJH00103AED  
1

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