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UNR31A2G PDF预览

UNR31A2G

更新时间: 2024-11-16 15:56:03
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
3页 236K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN

UNR31A2G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):0.08 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UNR31A2G 数据手册

 浏览型号UNR31A2G的Datasheet PDF文件第2页浏览型号UNR31A2G的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR31A2  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.05  
–0.02  
+0.05  
For digital circuits  
0.33  
0.10  
–0.02  
3
Features  
Suitable for high-density mounting and downsizing of the equipmen
Contribute to low power consumption  
+0.
1
2
0.23  
–0.0
(0.40)(0.40)  
80 0.05  
0.05  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCE
V
Collector current  
IC  
Tj  
80  
mA  
mW  
C  
1: Base  
2: Emitter  
3: Collector  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
125  
SSSMini3-F1 Package  
Tstg  
55 to 125  
°C  
Marking Symbol: CF  
Internal Connection  
R1 (22 kΩ)  
B
C
E
R2  
(2 kΩ)  
ElectricCharacteristics Ta = 25°C 3°C  
er  
Symbol  
VCBO  
VCEO  
ICBO  
Conditions  
Min  
50  
50  
Typ  
Max  
Unit  
V
Collector-Emitter open)  
Collector-emitttage (Base op)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
V
VCB = −50 V, IE = 0  
VCE = −50 V, IB = 0  
VEB = −6 V, IC = 0  
VCE = −10 V, IC = −5 mA  
0.1  
0.5  
0.2  
µA  
µA  
mA  
ICEO  
IEBO  
hFE  
60  
VCE(sat) IC = −10 mA, IB = − 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ  
4.9  
V
Output voltage low-level  
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ  
0.2  
+30%  
1.2  
V
Input resistance  
30%  
22  
1.0  
80  
kΩ  
Resistance ratio  
R1 / R2  
fT  
0.8  
Transition frequency  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: May 2004  
SJH00088BED  
1

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