Datasheet > UNR31AM

UNR31AM

更新时间： 2024-11-15 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	87K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

获取价格

数据手册

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UNR31AM 数据手册

Transistors with built-in Resistor

UNR31AM

Silicon PNP epitaxial planar type

Unit: mm

For digital circuits

+0.05

–0.02

+0.05

0.33

0.10

–0.02

■ Features

• Suitable for high-density mounting and downsizing of the equipment

• Contribute to low power consumption

+0.05

0.23

–0.02

(0.40)(0.40)

0.80 ^0.05

1.20 0.05

■ Absolute Maximum Ratings T_a= 25°C

5°

Parameter

Symbol

Rating

−50

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

T_j

−80

°C

1: Base

2: Emitter

3: Collector

Total power dissipation

Junction temperature

Storage temperature

100

125

SSSMini3-F1 Package

T_stg

−55 to +125

°C

Marking Symbol: EF

Internal Connection

R₁(2.2 kΩ)

R₂

(47 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

V_CE= −10 V, I_C= −5 mA

− 0.1

− 0.5

− 0.2

µA



I_CEO

I_EBO

h_FE

V_CE(sat)I_C= −10 mA, I_B= − 0.3 mA

− 0.25

V_OH

V_OL

R₁

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ

−4.9

−30%

Output voltage low-level

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

− 0.2

Input resistance

2.2

+30%

kΩ



Resistance ratio

R₁/ R₂

f_T

0.037 0.047 0.057

Transition frequency

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: October 2003

SJH00062BED

12 3

中文翻译

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与UNR31AM相关器件

型号	品牌	获取价格	描述	数据表
UNR31AMG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
UNR31AN	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR31ANG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
UNR31AT	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR31AV	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
UNR31AVG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
UNR3210	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SSSMINI
UNR3213	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SSSMINI
UNR3216	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SSSMINI
UNR321L	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SSSMINI

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