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UN221ZT

更新时间: 2024-09-15 13:15:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
17页 236K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

UN221ZT 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 4.680
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

UN221ZT 数据手册

 浏览型号UN221ZT的Datasheet PDF文件第2页浏览型号UN221ZT的Datasheet PDF文件第3页浏览型号UN221ZT的Datasheet PDF文件第4页浏览型号UN221ZT的Datasheet PDF文件第5页浏览型号UN221ZT的Datasheet PDF文件第6页浏览型号UN221ZT的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/  
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z  
Silicon NPN epitaxial planer transistor  
Unit: mm  
2.8 +00..32  
1.5 +00..0255  
For digital circuits  
0.65±0.15  
0.65±0.15  
Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through tape packing and magazine packing.  
3
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
UN2211  
UN2212  
UN2213  
UN2214  
UN2215  
UN2216  
UN2217  
UN2218  
UN2219  
UN2210  
UN221D  
UN221E  
UN221F  
UN221K  
UN221L  
UN221M  
UN221N  
UN221T  
UN221V  
UN221Z  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.1 to 0.3  
0.4±0.2  
1:Base  
2:Emitter  
EIAJ:SC-59  
Mini Type Package  
3:Collector  
8H  
8I  
Internal Connection  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
EZ  
FD  
FF  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
200  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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