UN2224TSK

更新时间： 2024-10-14 12:59:11

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
4页	66K
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UN2224TSK 数据手册

Transistors with built-in Resistor

UN2221/2222/2223/2224

Silicon NPN epitaxial planer transistor

Unit: mm

2.8 ⁺^–0⁰^.^.³²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

0.65±0.15

For digital circuits

Features

■

●

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

Mini type package, allowing downsizing of the equipment and

●

automatic insertion through tape packing and magazine packing.

Resistance by Part Number

■

Marking Symbol (R₁)

(R₂)

●

UN2221

UN2222

UN2223

UN2224

2.2kΩ

4.7kΩ

10kΩ

2.2kΩ

4.7kΩ

10kΩ

0.1 to 0.3

0.4±0.2

1:Base

2:Emitter

3:Collector

EIAJ:SC-59

Mini Type Package

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Internal Connection

Collector to base voltage

Collector to emitter voltage

Collector current

500

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

200

T_j

150

T_stg

–55 to +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

V_CB= 50V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 50V, I_B= 0

µA

UN2221

Emitter

UN2222

I_EBO

V_EB= 6V, I_C= 0

cutoff

current

UN2223/2224

Collector to base voltage

V_CBO

V_CEO

I_C= 10µA, I_E= 0

Collector to emitter voltage

I_C= 2mA, I_B= 0

Forward

current

transfer

ratio

UN2221

UN2222

h_FE

V_CE= 10V, I_C= 100mA

UN2223/2224

Collector to emitter saturation voltage V_CE(sat)

I_C= 100mA, I_B= 5mA

0.25

0.2

Output voltage high level

Output voltage low level

Transition frequency

V_OH

V_OL

f_T

V_CC= 5V, V_B= 0.5V, R_L= 500Ω

V_CC= 5V, V_B= 3.5V, R_L= 500Ω

V_CB= 10V, I_E= –50mA, f = 200MHz

4.9

200

2.2

4.7

MHz

UN2221/2224

Input

UN2222

R₁

(–30%)

0.8

(+30%)

1.2

kΩ

resis-

tance

UN2223

Resistance ratio

1.0

0.22

R₁/R₂

UN2224

12 3 4

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