UMY1N

更新时间： 2024-09-14 22:17:27

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	99K
描述
Emitter common (dual transistors)

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中文翻译

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数据手册

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UMY1N 数据手册

EMY1 / UMY1N / FMY1A

Transistors

Emitter common (dual transistors)

EMY1 / UMY1N / FMY1A

!Features

!External dimensions (Units : mm)

1) Includes a 2SA1037AK and a 2SC2412K transistor in

a EMT or UMT or SMT package.

2) PNP and NPN transistors have common emitters.

3) Mounting cost and area can be cut in half.

EMY1

( )

(

)

1.2

1.6

Each lead has same dimensions

!Structure

ROHM

: EMT5

Epitaxial planar type

PNP / NPN silicon transistor

Abbreviated symbol : Y1

UMY1N

!Equivalent circuit

1.25

2.1

EMY1 / UMY1N

FMY1A

(3)

(4)

(5)

(3)

(2)

(1)

0.1Min.

Tr2

Tr1

Tr2

Each lead has same dimensions

(2)

(1)

(4)

(5)/(6)

ROHM

EIAJ

UMT5

SC-88A

Abbreviated symbol : Y1

FMY1A

!Absolute maximum ratings (Ta = 25°C)

Limits

Parameter

Symbol

Unit

−60

−50

−6

Tr2

1.6

2.8

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

0.3to0.6

Each lead has same dimensions

ROHM

EIAJ

SMT5

−150

150

SC-74A

EMY1, UMY1N

Power

150 (TOTAL)^∗1

300 (TOTAL)^∗2

150

Abbreviated symbol : Y1

dissipation

FMY1A

Junction temperature

Storage temperature

°C

Tstg

−55∼+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

12 3 4 5

中文翻译

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