Datasheet > UMX18N

UMX18N

更新时间： 2024-11-28 22:17:27

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
General purpose transistors (dual transistors)

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中文翻译

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数据手册

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UMX18N 数据手册

EMX18 / UMX18N

Transistors

General purpose transistors

(dual transistors)

EMX18 / UMX18N

zExternal dimensions (Units : mm)

zFeatures

1) Two 2SC5585 chips in a EMT or UMT package.

2) Mounting possible with EMT3 or UMT3 automatic

mounting machines.

EMX18

( )

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

UMX18N

Abbreviated symbol : X18

zStructure

Epitaxial planar type

NPN silicon transistor

1.25

2.1

The following characteristics apply to both Tr1 and Tr2.

0.1Min.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

zEquivalent circuit

Abbreviated symbol : X18

EMX18 / UMX18N

(3) (2) (1)

Tr1

Tr2

(4) (5) (6)

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Unit

VCBO

VCEO

VEBO

500

˚C

150 (TOTAL)

Power dissipation

Junction temperature

Storage temperature

150

Tstg

−55 +150

1 120mW per element must not be exceeded.

12 3

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