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UMX1NTL

更新时间: 2024-11-29 13:02:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 92K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon

UMX1NTL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G6
JESD-609代码:e2元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICONVCEsat-Max:0.4 V
Base Number Matches:1

UMX1NTL 数据手册

 浏览型号UMX1NTL的Datasheet PDF文件第2页浏览型号UMX1NTL的Datasheet PDF文件第3页浏览型号UMX1NTL的Datasheet PDF文件第4页 
EMX1 / UMX1N / IMX1  
Transistors  
General purpose transistors  
(dual transistors)  
EMX1 / UMX1N / IMX1  
!Features  
!External dimensions (Units : mm)  
1) Two 2SC2412K chips in a EMT or UMT or SMT  
package.  
EMX1  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
3) Transistor elements are independent, eliminating  
interference.  
1.2  
1.6  
Each lead has same dimensions  
ROHM  
: EMT6  
4) Mounting cost and area can be cut in half.  
Abbreviated symbol : X1  
UMX1N  
!Structure  
Epitaxial planar type  
NPN silicon transistor  
1.25  
2.1  
0.1Min.  
!Equivalent circuit  
Each lead has same dimensions  
ROHM  
EIAJ  
:
UMT6  
:
SC-88  
EMX1 / UMX1N  
IMX1  
(3) (2) (1)  
(4) (5) (6)  
Abbreviated symbol : X1  
IMX1  
Tr1  
Tr1  
Tr2  
Tr2  
(4) (5) (6)  
(3) (2) (1)  
1.6  
2.8  
0.3to0.6  
The following characteristics apply to both Tr1 and Tr2.  
Each lead has same dimensions  
ROHM  
EIAJ  
:
SMT6  
:
SC-74  
!Absolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : X1  
Limits  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Unit  
V
V
V
V
CBO  
CEO  
EBO  
60  
50  
V
7
V
I
C
150  
mA  
1
2
EMX1, UMX1N  
Power  
150 (TOTAL)  
300 (TOTAL)  
150  
P
C
mW  
dissipation  
IMX1  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55∼+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
1/3  

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