Datasheet > UM6J1NTN

UM6J1NTN

更新时间： 2024-11-01 12:01:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	113K
描述
4V Drive Pch MOSFET

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中文翻译

获取价格

数据手册

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UM6J1NTN 数据手册

4V Drive Pch MOSFET

UM6J1N

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

UMT6

2.0

1.3

0.9

0.7

0.65

zFeatures

( )

1) Two RSU002P03 transistors in a single UMT package.

2) The MOSFET elements are independent, eliminating

mutual interference.

( )

1pin mark

( )

3) Mounting cost and area can be cut in half.

0.2

0.15

Each lead has same dimensions

Abbreviated symbol : J01

zApplications

Switching

zPackaging specifications

zInner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

∗1

Basic ordering unit (pieces)

3000

UM6J1N

∗2

∗1

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

−30

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

0.2

Drain current

∗1

∗2

Pulsed

I_DP

0.4

mW / TOTAL

mW / ELEMENT

°C

150

Total power dissipation

Channel temperature

P_D

120

Tch

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

Tstg

−55 to +150

°C

∗2 Each terminal mounted on a recommended land

zThermal resistance

Parameter

Symbol

Limits

833

Unit

Rth(ch-a)^∗

°C/W / TOTAL

°C/W / ELEMENT

Channel to ambient

1042

∗ Each terminal mounted on a recommended land

www.rohm.com

2009.04 - Rev.A

1/3

12 3 4

中文翻译

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