UM6K34NTCN

更新时间： 2024-02-11 07:37:09

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1185K
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中文翻译

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数据手册

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UM6K34NTCN 数据手册

Data Sheet

0.9V Drive Nch + Nch MOSFET

UM6K34N

 Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT6

(SC-88)

<SOT-363>

(6) (5) (4)

Features

1) Mounting cost and area can be cut in half.

2) Low On-resistance.

(1) (2) (3)

3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment.

Abbreviated symbol : K34

 Application

Interfacing, Switching

Inner circuit

(6)

(5)

(4)

∗1

 Packaging specifications

Package

Taping

TCN

3000

○

∗2

Type

∗2

Code

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

Basic ordering unit (pieces)

∗1

UM6K34N

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Drain-source voltage

Gate-source voltage

8

Continuous

200

800

125

800

Drain current

Pulsed

I_DP

I_s

Continuous

Pulsed

Source current

(Body Diode)

I_sp

150

120

mW / TOTAL

P_D

Power dissipation

mW / ELEMENT

Channel temperature

Tch

150

C

Range of storage temperature

*1 Pw10s, Duty cycle1%

Tstg

55 to 150

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Symbol

Limits

833

Unit

˚C / W /TOTAL

˚C / W /ELEMENT

Channel to Ambient

Rth (ch-a)

1042

* Each terminal mounted on a recommended land.

www.rohm.com

2011.04 - Rev.A

1/6

12 3 4 5 6 7

中文翻译

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