Datasheet > UM6K1N_1

UM6K1N_1

更新时间： 2022-12-17 08:09:27

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	71K
描述
2.5V Drive Nch+Nch MOS FET

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数据手册

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UM6K1N_1 数据手册

UM6K1N

Transistors

2.5V Drive Nch+Nch MOS FET

UM6K1N

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

UMT6

2.0

1.3

0.9

0.7

0.65

zFeatures

( )

(

)

(

)

1) Two 2SK3018 transistors in a single UMT package.

2) The MOS FET elements are independent, eliminating

mutual interference.

(

)

( )

1pin mark

( )

0.2

0.15

3) Mounting cost and area can be cut in half.

4) Low On-resistance.

Each lead has same dimensions

5) Low voltage drive (2.5V drive) makes this device ideal for

portable equipment.

Abbreviated symbol : K1

zApplications

Interfacing, switching (30V, 100mA)

Gate

Protection

Diode

zPackaging specifications

zInner circuit

(6)

(5)

(4)

∗

Package

Taping

Tr1

Type

Code

Basic ordering unit (pieces)

3000

UM6K1N

Tr2

∗

Gate

Protection

Diode

(1)

(2)

(3)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

A protection diode has been built

in between the gate and the source

to protect against static electricity

when the product is in use.

Use the protection circuit when

rated voltages are exceeded.

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

100

°C

Drain current

Pulsed

∗1

I_DP

P_D

400

∗2

Total power dissipation

Channel temperature

150

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

−55 to +150

°C

∗2 With each pin mounted on the recommended lands.

zThermal resistance

Parameter

Symbol

Limits

833

Unit

Rth(ch-a)^∗

°C / W / TOTAL

°C / W / ELEMENT

Channel to ambient

1042

∗ With each pin mounted on the recommended lands.

Rev.B

1/3

12 3 4

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