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UFZT1053A PDF预览

UFZT1053A

更新时间: 2024-01-04 10:08:37
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
4页 64K
描述
Power Bipolar Transistor, 4.5A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UFZT1053A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.51外壳连接:COLLECTOR
最大集电极电流 (IC):4.5 A集电极-发射极最大电压:75 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

UFZT1053A 数据手册

 浏览型号UFZT1053A的Datasheet PDF文件第2页浏览型号UFZT1053A的Datasheet PDF文件第3页浏览型号UFZT1053A的Datasheet PDF文件第4页 
SOT223 NPN SILICON PLANAR  
MEDIUM POWER HIGH GAIN TRANSISTOR  
ISSUE 2 - MARCH 2001  
FZT1053A  
FEATURES  
C
*
*
*
*
*
*
VCEO = 75V  
4.5 Amp Continuous Current  
10 Amp Pulse Current  
Low Saturation Voltage  
High Gain  
E
C
B
SOT223  
Extremely Low Equivalent On-resistance; RCE(sat) = 78mat 4.5A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
150  
75  
7.5  
V
V
Peak Pulse Current  
10  
A
Continuous Collector Current  
Base Current  
IC  
4.5  
A
IB  
500  
mA  
W
°C  
Power Dissipation at Tamb=25°C †  
Ptot  
2.5  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
The power which can be dissipated assuming the device is mounted in typical manner on a PCB  
with copper equal to 2 inches x 2 inches.  

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