Datasheet > U631H256XS

U631H256XS

更新时间： 2024-11-07 03:57:35

品牌	Logo	应用领域
SIMTEK		静态存储器
页数	文件大小	规格书
15页	226K
描述
SoftStore 32K x 8 nvSRAM Die

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中文翻译

获取价格

数据手册

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U631H256XS 数据手册

Obsolete - Not Recommended for New Designs

U631H256XS

SoftStore 32K x 8 nvSRAM Die

Features

Description

• High-performance CMOS non-

The U631H256XS has two sepa- data integrity.

volatile static RAM 32768 x 8 bits rate modes of operation: SRAM Once a STORE cycle is initiated,

• 25, 35 and 45 ns Access Times

• 10, 15 and 20 ns Output Enable

Access Times

• Software STORE Initiation

• Automatic STORE Timing

• 10⁵STORE cycles to EEPROM

• 10 years data retention in

EEPROM

mode and nonvolatile mode. In further input or output are disabled

SRAM mode, the memory operates until the cycle is completed.

as an ordinary static RAM. In non- Because a sequence of addresses

volatile operation, data is transfer- is used for STORE initiation, it is

red in parallel from SRAM to important that no other read or

EEPROM or from EEPROM to write accesses intervene in the

SRAM. In this mode SRAM sequence or the sequence will be

functions are disabled.

aborted.

• Automatic RECALL on Power Up The U631H256XS is a fast static Internally, RECALL is a two step

• Software RECALL Initiation

• Unlimited RECALL cycles from

EEPROM

RAM (25, 35, 45 ns), with a nonvo- procedure. First, the SRAM data is

latile electrically erasable PROM cleared and second, the nonvola-

(EEPROM) element incorporated tile information is transferred into

in each static memory cell. The the SRAM cells.

SRAM can be read and written an The RECALL operation in no way

unlimited number of times, while alters the data in the EEPROM

independent nonvolatile data resi- cells. The nonvolatile data can be

des in EEPROM. Data transfers recalled an unlimited number of

from the SRAM to the EEPROM times.

• Unlimited Read and Write to

SRAM

• Single 5 V ± 10 % Operation

• Operating temperature range

0 to 70 °C

-40 to 85 °C

• QS 9000 Quality Standard

• ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

(the STORE operation), or from the

EEPROM to the SRAM (the The chips are tested with a

RECALL operation) are initiated restricted wafer probe program

through software sequences.

at room temperature only. Unte-

The U631H256XS combines the sted parameters are marked with

high performance and ease of use a number sign (#).

of a fast SRAM with nonvolatile

Pad Configuration

Pad Description

A14

A13

VCC

A7 A12

Signal Name Signal Description

A11

A0 - A14

Address Inputs

Data In/Out

DQ0 - DQ7

Chip Enable

Output Enable

Write Enable

Power Supply Voltage

Ground

A10

VCC

VSS

DQ7

DQ1 DQ2 VSS VCC DQ3 DQ4 DQ5 DQ6

DQ0

March 31, 2006

STK Control #ML0044

Rev 1.0

12 3 4 5 6 7...15

中文翻译

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与U631H256XS相关器件

型号	品牌	获取价格	描述	数据表
U631H256XSC35	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 35ns, UUC35, DIE-35
U631H256XSC45	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, UUC35, DIE-35
U631H256XSK25	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 25ns, UUC35, DIE-35
U631H256XSK35	CYPRESS	获取价格	Non-Volatile SRAM, 32KX8, 35ns, CMOS, DIE-35
U631H256XSK45	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, UUC35, DIE-35
U631H64	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC25	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC25G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC35	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC35G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM

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