Datasheet > U631H64

U631H64

更新时间： 2024-11-07 03:57:35

品牌	Logo	应用领域
SIMTEK		静态存储器
页数	文件大小	规格书
13页	132K
描述
SoftStore 8K x 8 nvSRAM

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中文翻译

获取价格

数据手册

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U631H64 数据手册

Obsolete - Not Recommended for New Designs

U631H64

SoftStore 8K x 8 nvSRAM

Features

• High-performance CMOS non-

volatile static RAM 8192 x 8 bits

• 25, 35 and 45 ns Access Times

• 12, 20 and 25 ns Output Enable

Access Times

• Software STORE Initiation

(STORE Cycle Time < 10 ms)

• Automatic STORE Timing

• 10⁵STORE cycles to EEPROM

• 10 years data retention in

EEPROM

fast SRAM with nonvolatile data

integrity.

Once a STORE cycle is initiated,

Description

The U631H64 has two separate further input or output are disabled

modes of operation: SRAM mode until the cycle is completed.

and nonvolatile mode. In SRAM Because a sequence of addresses

mode, the memory operates as an is used for STORE initiation, it is

ordinary static RAM. In nonvolatile important that no other read or

operation, data is transferred in write accesses intervene in the

parallel from SRAM to EEPROM or sequence or the sequence will be

from EEPROM to SRAM. In this aborted.

• Automatic RECALL on Power Up mode SRAM functions are disab- Internally, RECALL is a two step

• Software RECALL Initiation

(RECALL Cycle Time < 20 μs)

• Unlimited RECALL cycles from

EEPROM

led.

procedure. First, the SRAM data is

The U631H64 is a fast static RAM cleared and second, the nonvola-

(25, 35, 45 ns), with a nonvolatile tile information is transferred into

electrically

erasable

PROM the SRAM cells.

• Unlimited Read and Write to

(EEPROM) element incorporated The RECALL operation in no way

in each static memory cell. The alters the data in the EEPROM

SRAM can be read and written an cells. The nonvolatile data can be

unlimited number of times, while recalled an unlimited number of

independent nonvolatile data resi- times.

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation), or from the

EEPROM to the SRAM (the

RECALL operation) are initiated

SRAM

• Single 5 V 10 % Operation

• Operating temperature ranges:

0 to 70 °C

-40 to 85 °C

• QS 9000 Quality Standard

• ESD characterization according

MIL STD 883C M3015.7-HBM

(classification see IC Code

Numbers)

through software sequences.

• RoHS compliance and Pb- free

• Packages: PDIP28 (300 mil)

SOP28 (330 mil)

The U631H64 combines the high

performance and ease of use of a

Pin Configuration

Pin Description

n.c.

A12

VCC

n.c.

Signal Name Signal Description

A0 - A12

Address Inputs

Data In/Out

DQ0 - DQ7

A11

PDIP

SOP

Chip Enable

A10

Output Enable

Write Enable

Power Supply Voltage

Ground

DQ7

DQ6

DQ5

DQ4

DQ3

VCC

VSS

DQ0

DQ1

DQ2

VSS

Top View

March 31, 2006

STK Control #ML0045

Rev 1.0

12 3 4 5 6 7...13

中文翻译

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与U631H64相关器件

型号	品牌	获取价格	描述	数据表
U631H64BDC25	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC25G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC35	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC35G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC45	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDC45G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDK25	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDK25G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDK35	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM
U631H64BDK35G1	SIMTEK	获取价格	SoftStore 8K x 8 nvSRAM

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