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TSUS520

更新时间: 2024-11-20 22:19:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 89K
描述
GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package

TSUS520 数据手册

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TSUS520.  
Vishay Telefunken  
GaAs Infrared Emitting Diodes in ø 5 mm (T–1 )  
Package  
Description  
94 8390  
TSUS520. series are infrared emitting diodes in stan-  
dard GaAs on GaAs technology, molded in a clear,  
blue–grey tinted plastic package. The devices are  
spectrally matched to silicon photodiodes and photo-  
transistors.  
Features  
Low cost emitter  
Low forward voltage  
High radiant power and radiant intensity  
Suitable for DC and high pulse current operation  
Standard T–1 (ø 5 mm) package  
Angle of half intensity ϕ = ± 15  
Peak wavelength = 950 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control and free air transmission systems with low forward voltage and low cost requirements  
in combination with PIN photodiodes or phototransistors.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
150  
300  
2.5  
210  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5 sec, 2 mm from case  
T
sd  
R
375  
thJA  
Document Number 81055  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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