Datasheet > TSUS520_07

TSUS520_07

更新时间： 2024-11-18 05:55:27

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	120K
描述
Infrared Emitting Diode, 950 nm, GaAs

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TSUS520_07 数据手册

TSUS520.

Vishay Semiconductors

Infrared Emitting Diode, 950 nm, GaAs

Description

TSUS520. series are infrared emitting diodes in stan-

dard GaAs on GaAs technology, molded in a clear,

blue-grey tinted plastic package. The devices are

spectrally matched to silicon photodiodes and pho-

totransistors.

94 8389

Features

Applications

• Low cost emitter

• Infrared remote control and free air transmission

systems with low forward voltage and low cost

requirements in combination with PIN photodiodes

or phototransistors.

• Low forward voltage

• High radiant power and radiant intensity

• Suitable for DC and high pulse current

operation

• Standard T-1¾ (∅ 5 mm) package

• Angle of half intensity ϕ = 15°

• Peak wavelength λ = 950 nm

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Reverse voltage

Test condition

Symbol

V_R

Value

Unit

Forward current

I_F

I_FM

I_FSM

P_V

150

300

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

2.5

210

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_j

100

T_amb

T_stg

T_sd

- 55 to + 100

260

°C

t ≤ 5 sec, 2 mm from case

°C

Thermal resistance junction/

ambient

R_thJA

375

K/W

Document Number 81055

Rev. 2.0, 23-Feb-07

www.vishay.com

12 3 4 5 6 7

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