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TSUS5201

更新时间: 2024-11-21 05:55:27
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
7页 120K
描述
Infrared Emitting Diode, 950 nm, GaAs

TSUS5201 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, PLASTIC PACKAGE-2
Reach Compliance Code:unknownHTS代码:8541.40.20.00
Factory Lead Time:18 weeks风险等级:5.06
其他特性:HIGH RELIABILITY配置:SINGLE
最大正向电流:0.15 A最大正向电压:1.7 V
JESD-609代码:e2安装特点:THROUGH HOLE MOUNT
功能数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:INFRARED LED
标称输出功率:14 mW峰值波长:950 nm
最大反向电压:5 V半导体材料:GaAs
形状:ROUND尺寸:5 mm
光谱带宽:5e-8 m子类别:Infrared LEDs
表面贴装:NO端子面层:Tin/Silver (Sn/Ag)
Base Number Matches:1

TSUS5201 数据手册

 浏览型号TSUS5201的Datasheet PDF文件第2页浏览型号TSUS5201的Datasheet PDF文件第3页浏览型号TSUS5201的Datasheet PDF文件第4页浏览型号TSUS5201的Datasheet PDF文件第5页浏览型号TSUS5201的Datasheet PDF文件第6页浏览型号TSUS5201的Datasheet PDF文件第7页 
TSUS520.  
Vishay Semiconductors  
Infrared Emitting Diode, 950 nm, GaAs  
Description  
TSUS520. series are infrared emitting diodes in stan-  
dard GaAs on GaAs technology, molded in a clear,  
blue-grey tinted plastic package. The devices are  
spectrally matched to silicon photodiodes and pho-  
totransistors.  
94 8389  
Features  
Applications  
• Low cost emitter  
• Infrared remote control and free air transmission  
systems with low forward voltage and low cost  
requirements in combination with PIN photodiodes  
or phototransistors.  
• Low forward voltage  
• High radiant power and radiant intensity  
e2  
• Suitable for DC and high pulse current  
operation  
• Standard T-1¾ (5 mm) package  
• Angle of half intensity ϕ = 15°  
• Peak wavelength λ = 950 nm  
p
• High reliability  
• Good spectral matching to Si photodetectors  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
5
Unit  
V
Forward current  
IF  
IFM  
IFSM  
PV  
150  
300  
mA  
mA  
A
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
2.5  
210  
mW  
°C  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 55 to + 100  
- 55 to + 100  
260  
°C  
°C  
t 5 sec, 2 mm from case  
°C  
Thermal resistance junction/  
ambient  
RthJA  
375  
K/W  
Document Number 81055  
Rev. 2.0, 23-Feb-07  
www.vishay.com  
1

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