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TSR40L100CT_V01 PDF预览

TSR40L100CT_V01

更新时间: 2024-09-11 02:52:31
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
4页 862K
描述
Trench MOS Barrier Schottky Rectifier

TSR40L100CT_V01 数据手册

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TSR40L100CT-CTF -CTB  
Trench MOS Barrier Schottky Rectifier  
Reverse Voltage - 100 V  
Forward Current - 40 A  
FEATURES  
Advanced trench technology  
Low forward voltage drop  
Low power losses  
High efficiency operation  
Lead free in comply with EU RoHS 2011/65/EU directives  
MECHANICAL DATA  
Case: TO-220AB/ITO220AB/TO-263  
Terminals: Solderable per MIL-STD-750, Method 2026  
Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified  
Parameter  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
Symbols  
Value  
Units  
V
100  
V
RRM  
RMS  
100  
V
V
Maximum DC Blocking Voltage  
100  
V
DC  
V
Per device  
Per diode  
40  
A
Maximum Average Forward Rectified Current  
I
F(AV)  
20  
A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave  
superimposed on rated load per diode  
280  
I
FSM  
A
Operating Temperature Range  
Storage Temperature Range  
-50 ~ +150  
T
J
°C  
-50 ~ +150  
T
STG  
°C  
TO-220AB/TO-263  
2
4
°C/W  
°C/W  
Typical Thermal Resistance Per diode(munted  
on FR-4 PCB)  
R
θJC  
ITO-220AB  
Note1: Thermal resistance from Junction to case per leg mounted on heatsink.  
Electrical Characteristics (Per Leg) unless otherwise specified  
Characteristics  
Forward Voltage Drop(Note2)  
Symbols  
Value  
Units  
V
Typ  
0.44  
0.65  
0.37  
0.59  
-
Max  
TA=25°C  
TA=125°C  
TA=25°C  
TA=125°C  
TA=25°C  
TA=125°C  
-
at IF=5A Instantaneous forward voltage per diode  
0.70  
V
F
-
-
at IF=20A Instantaneous forward voltage per  
diode  
90  
-
uA  
Instantaneous reverse current per diode at rated  
reverse voltage  
I
R
10  
mA  
Note2: (1)Pulse test: 300 μs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 4  

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