TSR40L100CT-CTF -CTB
Trench MOS Barrier Schottky Rectifier
Reverse Voltage - 100 V
Forward Current - 40 A
FEATURES
Advanced trench technology
Low forward voltage drop
Low power losses
High efficiency operation
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: TO-220AB/ITO220AB/TO-263
Terminals: Solderable per MIL-STD-750, Method 2026
Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Symbols
Value
Units
V
100
V
RRM
RMS
100
V
V
Maximum DC Blocking Voltage
100
V
DC
V
Per device
Per diode
40
A
Maximum Average Forward Rectified Current
I
F(AV)
20
A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
superimposed on rated load per diode
280
I
FSM
A
Operating Temperature Range
Storage Temperature Range
-50 ~ +150
T
J
°C
-50 ~ +150
T
STG
°C
TO-220AB/TO-263
2
4
°C/W
°C/W
Typical Thermal Resistance Per diode(munted
on FR-4 PCB)
R
θJC
ITO-220AB
Note1: Thermal resistance from Junction to case per leg mounted on heatsink.
Electrical Characteristics (Per Leg) unless otherwise specified
Characteristics
Forward Voltage Drop(Note2)
Symbols
Value
Units
V
Typ
0.44
0.65
0.37
0.59
-
Max
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
-
at IF=5A Instantaneous forward voltage per diode
0.70
V
F
-
-
at IF=20A Instantaneous forward voltage per
diode
90
-
uA
Instantaneous reverse current per diode at rated
reverse voltage
I
R
10
mA
Note2: (1)Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
1 / 4