Datasheet > TSM8N80CZC0G

TSM8N80CZC0G

更新时间： 2024-09-18 12:19:11

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页数	文件大小	规格书
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描述
800V N-Channel Power MOSFET

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TSM8N80CZC0G 数据手册

TSM8N80

800V N-Channel Power MOSFET

TO-220

ITO-220

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3. Source

800

1.4 @ V_GS=10V

General Description

The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half

bridge.

Block Diagram

Features

●

Low R_DS(ON)1.4Ω (Max.)

Low gate charge typical @ 41nC (Typ.)

Improve dv/dt capability

Ordering Information

Part No.

Package

Packing

TSM8N80CZ C0

TSM8N80CZ C0G

TSM8N80CI C0G

TO-220

ITO-220

50pcs / Tube

N-Channel MOSFET

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

TO-220

ITO-220

Unit

Drain-Source Voltage

Gate-Source Voltage

800

±30

V_GS

Tc = 25^oC

Tc = 100^oC

8 *

Continuous Drain Current

I_D

4.9

4.9 *

32 *

Pulsed Drain Current *

I_DM

dv/dt

E_AS

I_AR

Peak Diode Recovery dv/dt (Note 4)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Repetitive) (Note 1)

Repetitive Avalanche Energy (Note 1)

4.5

171

E_AR

Tc = 25^oC

250

40.3

0.32

150

Power Dissipation

P_D

Derate above 25℃

ºC/W

ºC

Operating Junction Temperature

T_J

Storage Temperature Range

T_STG

-55 to +150

^oC

* Limited by maximum junction temperature

1/10

Version: C13

12 3 4 5 6 7...10

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