Datasheet > TSM900N06CWRPG

TSM900N06CWRPG

更新时间： 2022-02-26 11:20:11

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TSC		/
页数	文件大小	规格书
8页	594K
描述
60V N-Channel Power MOSFET

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数据手册

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TSM900N06CWRPG 数据手册

TSM900N06

60V N-Channel Power MOSFET

TO-251S

(IPAK SL)

TO-252

(DPAK)

Key Parameter Performance

Pin Definition:

1. Gate

2. Drain

Parameter

Value

Unit

3. Source

V_DS

V_GS= 10V

V_GS= 4.5V

R_DS(on)(max)

Q_g

mΩ

100

9.3

SOT-223

Block Diagram

Ordering Information

Part No.

Package

TO-251S

TO-252

Packing

TSM900N06CH X0G

TSM900N06CP ROG

TSM900N06CW RPG

75pcs / Tube

2.5kpcs / 13” Reel

SOT-223

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)

Limit

Parameter

Symbol

Unit

IPAK

DPAK

SOT-223

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

Tc=25°C

Continuous Drain Current ^{(Note 1)}

I_D

Tc=100°C

Pulsed Drain Current ^{(Note 1)}

Single Pulse Avalanche Energy ^{(Note 3)}

Single Pulse Avalanche Current ^{(Note 3)}

I_DM

E_AS

I_AS

@ T_C=25°C

0.2

1.79

Total Power

Dissipation

P_D

Derate above T_C=25°C

0.2

0.014

W/°C

°C

Operating Junction Temperature

Storage Temperature Range

T_J

150

-55 to +150

T_STG

1/8

Version: B14

12 3 4 5 6 7 8

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