Datasheet > TSM4435_07

TSM4435_07

更新时间： 2024-11-11 03:57:39

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	358K
描述
30V P-Channel MOSFET

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TSM4435_07 数据手册

TSM4435

30V P-Channel MOSFET

PRODUCT SUMMARY

SOP-8

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

V_DS(V)

R_DS(on)(mΩ)

21 @ V_GS= -10V

35 @ V_GS= -4.5V

I_D(A)

-9.1

-30

-6.9

5, 6, 7, 8. Drain

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Application

●

DC-DC Conversion

Battery Switch

P-Channel MOSFET

Ordering Information

Part No.

Package

SOP-8

Packing

TSM4435CS RL

2.5Kpcs / 13” Reel

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

-30

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±20

Continuous Drain Current

-9.1

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a,b

I_DM

I_S

-50

-2.1

Ta = 25^oC

Ta = 75^oC

2.5

Maximum Power Dissipation

P_D

1.6

Operating Junction Temperature

T_J

+150

- 55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

RӨ_JF

Limit

Unit

^oC/W

Junction to Foot (Drain) Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

Notes:

RӨ_JA

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 10 sec.

1/6

Version: A07

12 3 4 5 6

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