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TSM480P06CHX0G PDF预览

TSM480P06CHX0G

更新时间: 2024-11-12 01:06:31
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
9页 891K
描述
60V P-Channel Power MOSFET

TSM480P06CHX0G 数据手册

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TSM480P06  
60V P-Channel Power MOSFET  
TO-220  
ITO-220  
Key Parameter Performance  
Pin Definition:  
1. Gate  
2. Drain  
Parameter  
Value  
-60  
Unit  
3. Source  
VDS  
V
VGS = -10V  
VGS = -4.5V  
48  
RDS(on) (max)  
Qg  
mΩ  
65  
22.4  
nC  
TO-251S  
(IPAK)  
TO-252  
(DPAK)  
Block Diagram  
Ordering Information  
Part No.  
Package  
TO-220  
Packing  
50pcs / Tube  
50pcs / Tube  
75pcs / Tube  
2.5kpcs / 13Reel  
TSM480P06CZ C0G  
TSM480P06CI C0G  
TSM480P06CH X0G  
TSM480P06CP ROG  
ITO-220  
TO-251S  
TO-252  
Note: Gdenotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm  
antimony compounds  
P-Channel MOSFE  
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)  
Limit  
Parameter  
Symbol  
Unit  
IPAK/DPAK  
ITO-220  
-60  
TO-220  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
V
±20  
-20  
Tc = 25°C  
A
Continuous Drain Current (Note 1)  
ID  
-13  
Tc = 100°C  
A
Pulsed Drain Current (Note 2)  
IDM  
EAS  
IAS  
A
-64  
Single Pulse Avalanche Energy(Note 3)  
Single Pulse Avalanche Current (Note 2)  
Power Dissipation @ TC = 25°C  
Operating Junction Temperature  
Storage Temperature Range  
51  
mJ  
A
-32  
PD  
40  
27  
66  
W
°C  
°C  
TJ  
-50 to +150  
-50 to +150  
TSTG  
1/9  
Version: D14  

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