Datasheet > TSM35N03CP

TSM35N03CP

更新时间： 2024-10-13 22:13:31

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	133K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

技术参数
数据手册

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TSM35N03CP 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TSM35N03CP 数据手册

TSM35N03

Preliminary

N-Channel Enhancement Mode MOSFET

V_DS= 30V

Pin assignment:

1. Gate

I_D= 50A

2. Drain

R_{DS (on)}, Vgs @ 10V, Ids @ 30A = 8.5mΩ

3. Source

R_{DS (on)}, Vgs @ 4.5V, Ids @ 30A = 13mΩ

Features

Advanced trench process technology

Fully Characterized Avalanche Voltage and Current

High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor

Drivers

Block Diagram

Ordering Information

Part No.

Packing

Package

TSM35N03CP

Tape & Reel

TO-252

Absolute Maximum Rating (T_A= 25 ^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_GS

±20

I_D

I_DM

350

T_A= 25 ^oC

W/^oC

^oC

Maximum Power Dissipation

P_D

T_A= 100 ^oC

Operating Junction Temperature

T_J

+150

-55 to +150

Operating Junction and Storage Temperature Range

Single Pulse Drain to Source Avalanche Energy

(V_DD= 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)

T_J, T_STG

^oC

E_AS

300

Thermal Performance

Parameter

Symbol

T_L

Limit

Unit

Lead Temperature (1/8” from case)

Junction-to-case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

Rθjc

2.2

^oC/W

Rθja

Note: 1. Maximum DC current limited by the package

2. 1-in²2oz Cu PCB board

TSM35N03

1-3

2005/04 rev. A

12 3

中文翻译

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