Datasheet > TSM3911D_14

TSM3911D_14

更新时间： 2024-10-15 01:19:03

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	266K
描述
20V Dual P-Channel MOSFET

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中文翻译

获取价格

数据手册

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TSM3911D_14 数据手册

TSM3911D

20V Dual P-Channel MOSFET

SOT-26

Key Parameter Performance

Pin Definition:

1. Gate 1

2. Source 2

3. Gate 2

6. Drain 1

5. Source 1

4. Drain 2

Parameter

Value

-20

Unit

V_DS

V_GS= -4.5V

140

V_GS= -2.5V

V_GS= -1.8V

R_DS(on)(max)

200

mΩ

300

Q_g

15.23

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Ordering Information

Part No.

Package

SOT-26

Packing

TSM3911DCX6 RF

3kpcs / 7” Reel

TSM3911DCX6 RFG

3kpcs / 7” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

Dual P-Channel MOSFET

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

Limit

-20

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±8

Continuous Drain Current

-2.2

Pulsed Drain Current

Continuous Source Current (Diode Conduction) ^{(Note 1,2)}

I_DM

I_S

-8

-0.72

1.15

T_A= 25ºC

Maximum Power Dissipation

T_A=70ºC

P_D

0.73

Operating Junction Temperature

T_J

+150

- 55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

RӨ_JF

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

RӨ_JA

1/6

Version: C14

12 3 4 5 6

中文翻译

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