Datasheet > TSM3900D_09

TSM3900D_09

更新时间： 2024-10-14 12:20:35

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	334K
描述
20V Dual N-Channel MOSFET

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中文翻译

获取价格

数据手册

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TSM3900D_09 数据手册

TSM3900D

20V Dual N-Channel MOSFET

SOT-26

Pin Definition:

PRODUCT SUMMARY

1. Gate 1

6. Drain 1

2. Source 2 5. Source 1

V_DS(V)

R_DS(on)(mΩ)

55 @ V_GS= 4.5V

70 @ V_GS= 2.5V

110 @ V_GS= 1.8V

I_D(A)

2.0

3. Gate 2

4. Drain 2

1.5

1.0

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Application

●

Load Switch

PA Switch

Ordering Information

Part No.

Package

SOT-26

Packing

TSM3900DCX6 RF

T&R

Dual N-Channel MOSFET

Absolute Maximum Rating (Ta = 25ºC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±8

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a,b

I_DM

I_S

1.6

Ta = 25ºC

Ta = 70ºC

2.0

Maximum Power Dissipation

P_D

1.3

Operating Junction Temperature

T_J

+150

-55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

RӨ_JC

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

Notes:

RӨ_JA

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 5 sec.

1/6

Version: B07

12 3 4 5 6

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