Datasheet > TSM3442CX6RFG

TSM3442CX6RFG

更新时间： 2024-10-15 01:19:03

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
7页	224K
描述
N-Channel Power MOSFET

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中文翻译

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技术参数
数据手册

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TSM3442CX6RFG 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TSM3442CX6RFG 数据手册

TSM3442

Taiwan Semiconductor

N-Channel Power MOSFET

20V, 4A, 70mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

●

Advance Trench Process Technology

PARAMETER

VALUE

UNIT

●

High Density Cell Design for Ultra Low On-resistance

V_DS

5.4

V_GS= 4.5V

V_GS= 2.5V

APPLICATION

●

R_DS(on)(max)

mΩ

Load Switch

Q_g

●

PA Switch

SOT-26

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±8

T_C= 25°C

Continuous Drain Current ^{(Note 1)}

I_D

T_C= 100°C

2.4

Pulsed Drain Current ^{(Note 2)}

I_DM

Total Power Dissipation @ T_C= 25°C

P_DTOT

1.25

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

LIMIT

UNIT

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Notes: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis determined by the user’s board

design. R_ӨJAshown below for single device operation on FR-4 PCB in still air

Document Number: DS_P0000076

Version: B15

12 3 4 5 6 7

中文翻译

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