Datasheet > TSM3460

TSM3460

更新时间： 2024-10-13 22:49:31

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	174K
描述
20V N-Channel MOSFET w/ESD Protected

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中文翻译

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TSM3460 数据手册

TSM3460

20V N-Channel MOSFET w/ESD Protected

Pin assignment:

V_DS= 20V

1. Drain

2. Drain

3. Gate

6. Drain

5, Drain

4. Source

R_{DS (on)}, Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.)

R_{DS (on)}, Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.)

Features

Block Diagram

ꢀ

Advanced trench process technology

High density cell design for ultra low on-resistance

Excellent thermal and electrical capabilities

Specially designed for Li-ion battery packs.

Battery switch application

Ordering Information

Part No.

Packing

Package

TSM3460CX6

Tape & Reel

SOT-26

3,000/per reel

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

20V

± 12

Continuous Drain Current, V_GS@4.5V.

Ta = 25 ^oC

Ta = 70 ^oC

I_D

Pulsed Drain Current, V_GS@4.5V

Diode Forward Current

I_DM

1.5

Maximum Power Dissipation

Ta = 25 ^oC

Ta = 70 ^oC

P_D

1.3

0.96

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

^oC

Thermal Performance

Parameter

Symbol

Rθjf

Limit

Unit

^oC/W

Junction to Foot (Drain) Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

Note: Surface mounted on FR4 board t<=300uS, Duty < 2%.

Rθja

120

TSM3460

1-1

2003/12 rev. F

12 3 4 5

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