Datasheet > TSM3446_10

TSM3446_10

更新时间： 2024-10-14 08:33:27

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	233K
描述
20V N-Channel MOSFET

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中文翻译

获取价格

数据手册

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TSM3446_10 数据手册

TSM3446

20V N-Channel MOSFET

SOT-26

PRODUCT SUMMARY

Pin Definition:

V_DS(V)

R_DS(on)(mΩ)

33 @ V_GS= 4.5V

40 @ V_GS= 2.5V

I_D(A)

5.3

1. Drain 6. Drain

2. Drain 5, Drain

3. Gate 4. Source

4.4

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Application

●

Load Switch

PA Switch

Ordering Information

Part No.

Package

SOT-26

Packing

TSM3446CX6 RF

3Kpcs / 7” Reel

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±12

Continuous Drain Current, V_GS@4.5V.

Pulsed Drain Current, V_GS@4.5V

Continuous Source Current (Diode Conduction)^a,b

5.3

I_DM

I_S

1.7

Ta = 25^oC

Ta = 70^oC

2.0

Maximum Power Dissipation

P_D

1.3

Operating Junction Temperature

T_J

+150

-55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

RӨ_JC

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

Notes:

RӨ_JA

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 5 sec.

1/1

Version: C07

12 3 4 5 6

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