Datasheet > TSM3457_14

TSM3457_14

更新时间： 2024-10-15 01:19:03

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描述
30V P-Channel MOSFET

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数据手册

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TSM3457_14 数据手册

TSM3457

30V P-Channel MOSFET

SOT-26

Key Parameter Performance

Parameter Value

Pin Definition:

1. Drain

2. Drain

3. Gate

6. Drain

5. Drain

4. Source

Unit

V_DS

-30

V_GS= -10V

V_GS= -4.5V

R_DS(on)(max)

Q_g

mΩ

100

9.52

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Ordering Information

Part No.

Package

SOT-26

Packing

TSM3457CX6 RF

3kpcs / 7” Reel

TSM3457CX6 RFG

3kpcs / 7” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

P-Channel MOSFET

Absolute Maximum Ratings (T_A= 25^oC unless otherwise noted)

Parameter

Symbol

Limit

-30

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±20

Continuous Drain Current

-5

Pulsed Drain Current

Continuous Source Current (Diode Conduction) ^{(Note 1,2)}

I_DM

I_S

-20

-1.7

T_A=25^oC

T_A=70^oC

2.0

Maximum Power Dissipation

P_D

1.3

Operating Junction Temperature

T_J

+150

- 55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

R_ӨJA

1/6

Version: C14

12 3 4 5 6

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