Datasheet > TSM058N06PQ56RLG

TSM058N06PQ56RLG

更新时间： 2024-01-19 20:36:07

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	638K
描述
60V N-Channel MOSFET

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数据手册

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TSM058N06PQ56RLG 数据手册

TSM058N06PQ56

60V N-Channel MOSFET

PDFN56

Key Parameter Performance

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

8. Drain

Parameter

V_DS

Value

Unit

7. Drain

6. Drain

5. Drain

R_DS(on)(max)

Q_g

5.8

mΩ

118

Features

Block Diagram

●

Low On-Resistance

Low Input Capacitance

Low Gate Charge

Ordering Information

Part No.

Package

Packing

TSM058N06PQ56 RLG

PDFN56

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (Tc=25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C=25°C

Continuous Drain Current ^{(Note 3)}

T_A=25°C

I_D

Drain Current-Pulsed ^{(Note 1)}

I_DM

240

Single Pulse Avalanche Energy^,L=0.1mH

E_AS

400

T_C=25°C

Maximum Power Dissipation ^{(Note 2)}

T_A=25°C

59.5

P_D

Storage Temperature Range

T_STG

T_J

-55 to +150

°C

Operating Junction Temperature Range

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

1.2

Unit

^oC/W

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

R_ӨJA

1/6

Version: A14

12 3 4 5 6

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