Datasheet > TSM060N03

TSM060N03

更新时间： 2024-01-18 21:00:58

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	466K
描述
N-Channel Power MOSFET

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中文翻译

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数据手册

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TSM060N03 数据手册

TSM060N03

Taiwan Semiconductor

N-Channel Power MOSFET

30V, 60A, 6mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

●

100% avalanche tested

PARAMETER

VALUE

UNIT

Fast switching

Pb-free plating

V_DS

●

V_GS=10V

V_GS=4.5V

●

RoHS compliant

Halogen-free mold compound

R_DS(on)(max)

mΩ

Q_g

11.1

APPLICATION

●

Mobile device DC-DC conversion

Point of Load (POL) DC-DC

Secondary Switch Rectification

PDFN33

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C= 25°C

Continuous Drain Current ^{(Note 1)}

I_D

T_C= 100°C

Pulsed Drain Current ^{(Note 2)}

I_DM

E_AS

240

Single Pulsed Avalanche Energy ^{(Note 3)}

Single Pulsed Avalanche Current ^{(Note 3)}

Total Power Dissipation @ T_C= 25°C

I_AS

P_DTOT

T_J, T_STG

°C

Operating Junction and Storage Temperature Range

- 55 to +150

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJc

LIMIT

2.8

UNIT

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Notes: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis determined by the user’s board

design. R_ӨJAshown below for single device operation on FR-4 PCB in still air

Document Number: DS_P0000164

Version: A15

12 3 4 5 6

中文翻译

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