Datasheet > TSM080N03PQ56

TSM080N03PQ56

更新时间： 2024-01-07 23:38:57

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	506K
描述
30V N-Channel Power MOSFET

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TSM080N03PQ56 数据手册

TSM080N03PQ56

30V N-Channel Power MOSFET

PDFN56

Key Parameter Performance

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

8. Drain

Parameter

Value

Unit

7. Drain

6. Drain

5. Drain

V_DS

V_GS= 10V

V_GS= 4.5V

R_DS(on)(max)

Q_g

mΩ

12.5

7.5

Block Diagram

Ordering Information

Part No.

Package

Packing

2.5kpcs / 13” Reel

TSM080N03PQ56 RLG

PDFN56

●

Note: “G” denotes for Halogen- and Antimony-free as those which

contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)

and <1000ppm antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

Tc = 25℃

Continuous Drain Current

I_D

Tc = 100℃

220

Pulsed Drain Current ^{(Note 1)}

I_DM

E_AS

P_D

Single Pulse Avalanche Energy ^{(Note 2)}

Power Dissipation @ T_C= 25℃

Operating Junction Temperature

Storage Temperature Range

℃

T_J

-55 to +150

T_STG

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

2.3

Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

℃/W

R_ӨJA

1/5

Version: A14

12 3 4 5

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