Datasheet > TSM085N03PQ33

TSM085N03PQ33

更新时间： 2024-01-24 17:29:03

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	468K
描述
30V N-Channel Power MOSFET

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数据手册

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TSM085N03PQ33 数据手册

TSM085N03PQ33

30V N-Channel Power MOSFET

PDFN33

Key Parameter Performance

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

8. Drain

Parameter

Value

Unit

7. Drain

6. Drain

5. Drain

V_DS

8.5

V_GS= 10V

V_GS= 4.5V

R_DS(on)(max)

Q_g

mΩ

7.5

Block Diagram

Ordering Information

Part No.

Package

Packing

5kpcs / 13” Reel

TSM085N03PQ33 RGG

PDFN33

●

Note: “G” denotes for Halogen- and Antimony-free as those which

contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)

and <1000ppm antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (T_C= 25°C unless otherwise noted)

Limit

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C= 25°C

Continuous Drain Current

I_D

T_C= 100°C

Pulsed Drain Current ^{(Note 1)}

I_DM

E_AS

P_D

192

Single Pulse Avalanche Energy ^{(Note 2)}

Power Dissipation @ T_C= 25°C

Operating Junction Temperature

Storage Temperature Range

°C

T_J

150

-55 to +150

T_STG

Thermal Performance

Parameter

Symbol

R_ӨJA

Limit

Unit

°C/W

Thermal Resistance - Junction to Ambient

Thermal Resistance - Junction to Case

R_ӨJC

3.6

1/5

Version: A14

12 3 4 5

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