Datasheet > TSM090N03CPROG

TSM090N03CPROG

更新时间： 2024-02-01 20:50:46

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	365K
描述
30V N-Channel Power MOSFET

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中文翻译

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数据手册

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TSM090N03CPROG 数据手册

TSM090N03CP

30V N-Channel Power MOSFET

TO-252

(DPAK)

Key Parameter Performance

Pin Definition:

1. Gate

2. Drain

Parameter

Value

Unit

3. Source

V_DS

V_GS= 10V

V_GS= 4.5V

R_DS(on)(max)

Q_g

mΩ

7.5

Block Diagram

Ordering Information

Part No.

Package

TO-252

Packing

TSM090N03CP ROG

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25ºC

Continuous Drain Current

I_D

T_C=100ºC

Pulsed Drain Current ^{(Note 1)}

Single Pulse Avalanche Energy ^{(Note 2)}

Single Pulse Avalanche Current ^{(Note 2)}

I_DM

E_AS

I_AS

220

@ T_C=25^oC

Derate above T_C=25^oC

0.32

Total Power Dissipation

P_D

W/ºC

ºC

^oC

Operating Junction Temperature

Storage Temperature Range

T_J

150

-55 to +150

T_STG

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

3.1

Unit

^oC/W

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

R_ӨJA

1/5

Version: A14

12 3 4 5

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