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TSM060N03ECP PDF预览

TSM060N03ECP

更新时间: 2024-02-15 04:12:27
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
5页 375K
描述
30V N-Channel Power MOSFET

TSM060N03ECP 数据手册

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TSM060N03ECP  
30V N-Channel Power MOSFET  
TO-252  
(DPAK)  
Key Parameter Performance  
Pin Definition:  
1. Gate  
2. Drain  
Parameter  
Value  
30  
Unit  
3. Source  
VDS  
V
VGS = 10V  
VGS = 4.5V  
6
RDS(on) (max)  
Qg  
mΩ  
9
11.1  
nC  
Features  
Block Diagram  
Fast switching  
G-S ESD Protection Diode Embedded  
Ordering Information  
Part No.  
Package  
Packing  
TSM060N03ECP ROG  
TO-252  
2.5kpcs / 13Reel  
Note: “G” denotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds  
N-Channel MOSFET with ESD protection  
Absolute Maximum Ratings (TC=25oC unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
70  
VGS  
V
TC=25ºC  
A
Continuous Drain Current  
ID  
44  
TC=100ºC  
A
Pulsed Drain Current (Note 1)  
Single Pulse Avalanche Energy (Note 2)  
Single Pulse Avalanche Current (Note 2)  
IDM  
EAS  
IAS  
A
280  
88  
42  
mJ  
A
@ TC=25oC  
Derate above TC=25oC  
54  
0.43  
W
Total Power Dissipation  
PD  
W/ºC  
ºC  
oC  
Operating Junction Temperature  
Storage Temperature Range  
TJ  
150  
-55 to +150  
TSTG  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
2.3  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
RӨJA  
62  
1/5  
Version: A14  

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