Datasheet > TSM080N03EPQ56RLG

TSM080N03EPQ56RLG

更新时间： 2024-01-26 05:43:13

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	411K
描述
N-Channel Power MOSFET

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TSM080N03EPQ56RLG 数据手册

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TSM080N03E

Taiwan Semiconductor

N-Channel Power MOSFET

30V, 55A, 8mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

●

Fast switching

100% EAS Guaranteed

Green Device Available

G-S ESD Protection Diode Embedded

PARAMETER

VALUE

UNIT

V_DS

V_GS= 10V

V_GS= 4.5V

R_DS(on)(max)

Q_g

mΩ

12.5

7.5

APPLICATION

●

Vcore / MB

POL Application

SMPS 2^ndSR

PDFN56

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C= 25°C

Continuous Drain Current ^{(Note 1)}

I_D

T_C= 100°C

Pulsed Drain Current ^{(Note 2)}

I_DM

P_DTOT

E_AS

220

Total Power Dissipation @ T_C= 25°C

Single Pulsed Avalanche Energy ^{(Note 3)}

Single Pulsed Avalanche Current ^{(Note 3)}

I_AS

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

LIMIT

2.3

UNIT

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Notes: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis determined by the user’s board

design. R_ӨJAshown below for single device operation on FR-4 PCB in still air.

Document Number: DS_P0000014

Version: B15

12 3 4 5 6

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