Datasheet > TSM05N03CWRP

TSM05N03CWRP

更新时间： 2024-01-26 21:37:17

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	63K
描述
30V N-Channel MOSFET

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数据手册

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TSM05N03CWRP 数据手册

Preliminary

TSM05N03

30V N-Channel MOSFET

SOT-223

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(mΩ)

I_D(A)

3. Source

60 @ V_GS=10V

90 @ V_GS=4.5V

3.8

Features

Block Diagram

●

Advance Trench Process Technology

●

High Density Cell Design for Ultra Low On-resistance

Application

●

Load Switch

PA Switch

●

Ordering Information

Part No.

Package

Packing

TSM05N03CW RP

SOT-223

2.5Kpcs / 13” Reel

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_DS

V_GS

I_D

±20

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a,b

I_DM

I_S

±20

1.7

Ta = 25^oC

Ta = 75^oC

1.1

Maximum Power Dissipation

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 to +150

Thermal Performance

Parameter

Symbol

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

RӨ

Junction to Ambient Thermal Resistance (PCB mounted)

Notes:

RӨ

^oC/W

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on a 1 in²pad of 2oz Cu, t ≤ 5 sec.

1/4

Version: Preliminary

12 3 4

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