Datasheet > TSI20H200CW

TSI20H200CW

更新时间： 2024-11-09 01:09:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	245K
描述
20A, 100V - 200V Trench Schottky Rectifiers

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中文翻译

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数据手册

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TSI20H200CW 数据手册

TSI20H100CW - TSI20H200CW

Taiwan Semiconductor

20A, 100V - 200V Trench Schottky Rectifiers

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Low power loss/ high efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

I²PAK

- Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters,

lighting and on-board DC/DC converters.

MECHANICAL DATA

Case: I²PAK

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Weight: 1.6 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

TSI20H

100CW

100

TSI20H

120CW

120

TSI20H

150CW

150

TSI20H

200CW

200

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

150

Voltage rate of change (Rated V_R)

10000

dV/dt

V/μs

TYP MAX TYP MAX TYP MAX TYP MAX

0.57 0.62 0.72 0.77

0.67 0.79 0.78 0.87 0.81 0.90 0.83 0.93

0.50 0.53 0.58 0.62

0.59 0.68 0.63 0.72 0.66 0.75 0.68 0.78

I_F= 5A

T_J= 25°C

I_F= 10A

I_F= 5A

Instantaneous forward voltage per diode

( Note1 )

V_F

T_J= 125°C

I_F= 10A

T_J= 25°C

200

100

μA

Instantaneous reverse current per diode at rated

reverse voltage

I_R

T_J= 125°C

R_θJC

2.8

3.8

°C/W

Typical thermal resistance per diode

R_θJL

T_J

°C/W

°C

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: Pulse test with pulse width = 300μs, 1% duty cycle

Document Number: DS_D1411038

Version: C15

12 3 4 5

中文翻译

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