Datasheet > TSF8N60M

TSF8N60M

更新时间： 2024-09-16 07:07:59

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其他 - ETC		/
页数	文件大小	规格书
7页	347K
描述
600V N-Channel MOSFET

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TSF8N60M 数据手册

TSP8N60M / TSF8N60M

600V N-Channel MOSFET

General Description

Features

This Pow er MOSFET is produced using Tr uesemi‘s

advanced planar stripe DMOS technology.

•

7.5A, 600V, R_DS(on)= 1.20 @V_GS= 10 V

Low gate charge ( typical 29nC)

High ruggedness

Fast wsitching

100% avalanche tested

This advanced technology has been espe cially tailored to

minimize o n-state r esistance, pr ovide superior switching

performance, and withstand high ener gy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency sw itched mode power supplies,

active power factor corr ection based on half br idge

topology.

Improved dv/dt capability

_D

●

◀

▲

●



TO-220F

TO-220

G D

D S

^S

Absolute Maximum Ratings

T = 25°Cunless otherwise noted

Symbol

V_DSS

Parameter

TSP8N60M

TSF8N60M

Units

Drain-Source Voltage

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

7.5

4.5

7.5*

4.5 *

30 *

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

E_AR

Gate-Source Voltage

 30

267

15.2

4.5

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

V/ns

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

dv/dt

P_D

152

- Derate above 25°C

Operating and Storage Temperature Range

1.21

0.40

W/°C

°C

T_J, T_STG

T_L

-55 to +150

300

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_JC

Parameter

TSP8N60M

TSF8N60M

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.82

0.5

2.5

R_CS

R_JA

62.5

代理销售：深圳德江源电子有限公司 0755-82966416 15989331311

12 3 4 5 6 7

中文翻译

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