Datasheet > TSD2444

TSD2444

更新时间： 2024-11-08 22:19:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	46K
描述
Low Vce(sat) NPN Transistor

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中文翻译

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数据手册

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TSD2444 数据手册

TSD2444

Low Vce(sat) NPN Transistor

BV_CEO= 20V

Ic = 1A

Pin assignment:

1. Base

V_{CE (SAT)}, = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA

2. Emitter

3. Collector

Features

Ordering Information

Low V_{CE (SAT).}

Part No.

Packing

Package

Excellent DC current gain characteristics

TSD2444CX

Tape & Reel

SOT-23

Structure

Epitaxial planar type.

Complementary to TSB1590CX

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

40V

20V

Pulse

1.5 (note 1)

0.225

Collector Power Dissipation

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 10mS

T_STG

- 55 to +150

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= 10uA, I_E= 0

I_C= 1mA, I_B= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 10uA, I_C= 0

V_CB= 20V, I_E= 0

V_EB= 4V, I_C= 0

0.5

0.4

390

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= 500mA / 50mA

V_CE= 2V, I_C= 0.1A

V_CE= 5V, I_C= 50mA,

f = 100MHz

V_CE(SAT)

h_FE

0.2

f_T

150

MHz

Output Capacitance

V_CB= 10V, f=1MHz

Cob

Note : pulse test: pulse width <=380uS, duty cycle <=2%

Classification Of h_FE

Rank

Range

82 - 180

120 - 270

180 - 390

TSD2444

1-3

2003/12 rev. A

12 3

中文翻译

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