Datasheet > TS7988

TS7988

更新时间： 2024-09-18 22:22:23

品牌	Logo	应用领域
三洋 - SANYO		显示器输出应用
页数	文件大小	规格书
3页	42K
描述
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

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数据手册

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TS7988 数据手册

Ordering number :EN5959

NPN Triple Diffused Planar Silicon Transistor

TS7988

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

Package Dimensions

unit:mm

• High speed.

• High breakdown voltage (V

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

=1600V).

CBO

2039D-TO3PML

[TS7988]

16.0

5.6

ø3.4

3.1

2.8

2.0

1.0

0.6

1:Base

2:Collector

3:Emitter

5.45

SANYO:TO-3PML

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Colletctor-to-Base Voltage

Symbol

Conditions

Ratings

Unit

1600

800

CBO

Colletctor-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Collector Dissipation

3.0

˚C

Tc=25˚ C

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Collector Cutoff Current

Symbol

Conditions

Unit

min

max

=800V, I =0

µA

CBO

Collector Cutoff Current

Collector Sustain Voltage

Emitter Cutoff Current

DC Current Gain

=1600V, R =0

1.0

CES

=100mA, I =0

800

CEO(sus)

=4V, I =0

1.0

EBO

=5V, I =1.0A

=5V, I =7A

FE(1)

FE(2)

C-E Saturation Voltage

B-E Saturation Voltage

Storage Time

=7A, I =1.75A

CE(sat)

BE(sat)

1.5

3.0

0.2

=6A, I =1.0A, I =–2.5A

B1 B2

=6A, I =1.0A, I =–2.5A

B1 B2

µs

stg

Fall Time

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42498TS (KOTO) TA-1619 No.5959-1/3

12 3

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